Sivverini, GiuseppeGiuseppeSivveriniMeazza, AndreaAndreaMeazzaTraversa, AntonioAntonioTraversaColzani, AlbertoAlbertoColzaniFonte, AlessandroAlessandroFonteMoscato, StefanoStefanoMoscatoFriesicke, ChristianChristianFriesicke2024-01-032024-01-032023https://publica.fraunhofer.de/handle/publica/45836210.23919/EuMIC58042.2023.10288947A V-band GaN Power Amplifier (PA), targeting 33 dBm of output power at 1 dB gain compression (P1dB), is presented. The PA has been designed on a 100-nm GaN/SiC process. It is composed of a driver stage and an amplifier. A Doherty-like topology has been adopted for the amplifier to increase the P1dB and Power Added Efficiency (PAE). Measurement results have shown average maximum values of 29.5 dB for the small-signal gain, 10.5% for the PAE@P1dB, and 33 dBm for P1dB within the 59 - 71 GHz band. The maximum total power consumption is 16.8 W and the chip sizes for the driver and amplifier are 2.75 mm × 1.5 mm and 5 mm × 2.75mm, respectively.enGaN/SiCDoherty Power AmplifierV-bandPower Added Efficiency (PAE)Monolithic microwave integrated circuit (MMIC)conference paper