Endres, S.S.EndresSessler, C.C.SesslerZeltner, S.S.ZeltnerEckardt, B.B.EckardtMorita, T.T.Morita2022-03-132022-03-132017https://publica.fraunhofer.de/handle/publica/400886This paper describes a bidirectional insulated onboard charger (OBC) based on normally-off GaN gate injection transistors (GaN-GIT) and shows that, by using 600 V GaN GITs in a totem pole PFC together with a CLLC converter with variable turns-ratio, a complete bidirectional insulated 6 kW on-board charger, as shown in Fig. 1, can be realized in only 2 dm3. Besides the description of the topology, especially the modular buildup of the prototype will be shown, as well as measurements.en670620530conference paper