Nolting, P.P.Nolting2022-03-022022-03-021977https://publica.fraunhofer.de/handle/publica/1690642-s2.0-49449122375The production of periodically doped InSb crystals by Peltier effect modulation was studied for the Czochralski process. Some experimental observations, which characterize the modulation of the segregation constant, are discussed qualitatively An examination of the crystals by helicon diagnostics shows no influence on the wave propagation process by the periodic structure. Therefore the change in notation produced by Peltier effect is too small to be used for amplification or generation of microwaves.decrystal growth from meltheliconsiii-v semiconductorsindium antimonidepeltier effectsemiconductor dopingsemiconductor growththermoelectric effects in semiconductors and insulatorsinsb single crystalsperiodically doped insb crystalspeltier effect modulationczochralski processsegregation constanthelicon diagnosticswave propagation processperiodic structureiii-v semiconductor621548journal article