GaSb-based 2.0 µm SDL with 17 W output power at 20°C

Holl, PeterPeterHollRattunde, MarcelMarcelRattundeAdler, SteffenSteffenAdlerBächle, AndreasAndreasBächleDiwo-Emmer, ElkeElkeDiwo-EmmerAidam, RolfRolfAidamWagner, J.J.Wagner2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24577810.1049/el.2016.24122-s2.0-84990186850A gallium antimonide-based semiconductor disk laser (SDL) emitting 17 W of continuous wave output power at a heat sink temperature of 20°C and an emission wavelength of 2.02 µm are presented. This high-output power is achieved by optimising the thermal management and reducing the quantum deficit of the SDL structure.en384GaSb-based 2.0 µm SDL with 17 W output power at 20°Cjournal article