Dammel, R.R.DammelDemmeler, R.R.DemmelerEhrlich, C.C.EhrlichHessemer, W.W.HessemerKohlmann, K.K.KohlmannLingnau, J.J.LingnauPongratz, S.S.PongratzReimer, K.K.ReimerScheunemann, U.U.ScheunemannTheis, J.J.Theis2022-03-082022-03-081989https://publica.fraunhofer.de/handle/publica/316400Resist sensitivity is one of the limiting factors in X-ray as well as e-beam lithography. To overcome the rather low sensitivities of commonly used resist like PMMA, a positiv-tone X-ray resist ("RAY-PF") has been recently developed, which makes use of the concept of chemical "amplification". Since a novolak is included as a binder matrix, development can be performed by aqueous alkaline solutions, e.g. RAZ-Developer. Replacement of the dissolution inhibitor in RAY-PF by a chemical crosslinker yields a negative-tone resist ("RAY-PN") with very similar processing. The present investigation refers to the application of both resist types, originally designed to meet the demands of X-ray mask fabrication.en621conference paper