Kunzel, H.H.KunzelGrote, N.N.GroteAlbrecht, P.P.AlbrechtBottcher, J.J.BottcherBornholdt, C.C.Bornholdt2022-03-082022-03-081992https://publica.fraunhofer.de/handle/publica/320621The authors present a study of material properties relevant to optical waveguides of MBE (molecular-beam epitaxy) grown InGaAlAs ( gamma g=1.06 mu m) layers lattice-matched to InP. In particular, the impact of the substrate temperature was investigated. MBE growth of In0.52Ga0.18Al0.30As ( gamma g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses of well below 2 dB/cm at gamma =1.55 mu m but also high resistivity of >104 Omega -cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at gamma =1.55 mu m.enaluminium compoundselectronic conduction in crystalline semiconductor thin filmsgallium arsenideindium compoundsintegrated opticsmolecular beam epitaxial growthoptical lossesoptical waveguidesrefractive indexsemiconductor epitaxial layerssemiconductor growthhigh resistivitylow loss ingaalas/InP optical waveguideslow-temperature mbematerial propertiesmolecular-beam epitaxysubstrate temperaturehigh-qualitylow propagation losses1.06 micron1.55 micron400 to 450 degc104 ohmcminpin0.52ga0.18al0.30asingaalas-InP621conference paper