Rüdiger, MarcMarcRüdigerRauer, MichaelMichaelRauerSchmiga, ChristianChristianSchmigaHermle, MartinMartinHermleGlunz, Stefan W.Stefan W.Glunz2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/37304310.1016/j.egypro.2011.06.1772-s2.0-80052089232We present a detailed study on accurate modeling of highly aluminum-doped p+ silicon. We have analyzed the influence of defect recombination and the effect of incomplete ionization on the saturation current densities of Al-p+ regions featuring different Al doping profiles. Very good agreement within a broad range of experimental data has been obtained. We demonstrate that incomplete ionization has a significant impact on the doping profile characteristics and, therefore, has to be accounted for in accurate modeling of highly aluminum-doped silicon.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikDotierung und DiffusionHerstellung und Analyse von hocheffizienten SolarzellenCharakterisierungZellen und Module621conference paper