Under CopyrightSchöck, JohannesJohannesSchöckSchlichting, HolgerHolgerSchlichtingKallinger, BirgitBirgitKallingerErlbacher, TobiasTobiasErlbacherRommel, MathiasMathiasRommelBauer, A.J.A.J.Bauer2022-03-1327.9.20172017https://publica.fraunhofer.de/handle/publica/39785510.24406/publica-fhg-397855Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.endefectdiodeVDMOSphotoluminescencetriangular defectwafer inspection670620530Influence of triangular defects on the electrical characteristics of 4H-SiC devicesposter