Kolkovsky, V.V.KolkovskyLukat, K.K.Lukat2022-03-042022-03-042013https://publica.fraunhofer.de/handle/publica/23397510.1016/j.microrel.2013.07.0662-s2.0-84886915542In the present study we demonstrate that the introduction of Cu leads to a significant reduction of the diffusion length in n-type Si/SiO2 structures. Using capacitance versus time measurements we show that the quasi-neutral generation mechanism is not dominant in Cu-contaminated samples at 90 °C. We correlate this behaviour with Cu-related defects which act as strong recombination centres in Si. Their electrical properties are determined and their origin will be discussed.en621journal article