Safari Mugisho, MoiseMoiseSafari MugishoFriesicke, ChristianChristianFriesickeAyad, MohammedMohammedAyadMaier, ThomasThomasMaierQuay, RüdigerRüdigerQuay2024-01-032024-01-032023https://publica.fraunhofer.de/handle/publica/45836110.23919/EuMIC58042.2023.10289079This paper presents the design of a two-stage harmonic-injection Doherty power amplifier (HI-DPA) in which a signal at the second harmonic frequency (2f0) is injected into the drain of the auxiliary transistor’s power stage. The injected 2f0 signal is generated by an on-chip single-stage injection power amplifier. The HI-DPA was manufactured on a 100 nm GaN HEMT technology. Preliminary continuous-wave (CW) on-wafer measurements performed at 24 GHz show that the HI-DPA achieves a power-added efficiency (PAE) of 42% at peak-outputpower (POP) and 6 dB output-power-back-off (OPBO) with an associated saturated output power (PSAT) of 33 dBm.enDoherty power amplifierGaNharmonic injectionhigh efficiencyload modulationconference paper