Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors

Lemberger, M.M.LembergerBaunemann, A.A.BaunemannBauer, A.J.A.J.Bauer2022-03-032022-03-032007https://publica.fraunhofer.de/handle/publica/21278810.1016/j.microrel.2007.01.032en670620530621Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursorsjournal article