Erdmann, A.A.ErdmannEvanschitzky, P.P.EvanschitzkyShao, F.F.ShaoFühner, T.T.FühnerLorusso, G.G.LorussoHendrickx, E.E.HendrickxGoethals, A.M.A.M.GoethalsJonckheere, R.R.JonckheereBret, T.T.BretHofmann, T.T.Hofmann2022-03-112022-03-112011https://publica.fraunhofer.de/handle/publica/37373910.1117/12.896813Extreme ultraviolet (EUV) - lithography at a wavelength around 13.5 nm is considered as the most promising successor of optical projection lithography. This paper reviews simulation models for EUV lithography. Resist model parameters are calibrated with experimental data. The models are applied for the investigation of the impact of mask multilayer defects on the lithographic process.enEUV lithographylithography simulationcomputational lithographyresist model calibrationmultilayer defect670620530conference paper