Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures

Stolz, W.W.StolzKnecht, J.J.KnechtPloog, K.K.PloogWagner, J.J.Wagner2022-03-022022-03-021986https://publica.fraunhofer.de/handle/publica/173419enabsorptionemissionExcitonenGaInAs/AlInAsquantum wells621667530Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structuresjournal article