Böttner, H.H.BöttnerSchießl, U.U.SchießlTacke, M.M.TackeSchießl, U.U.Schießl2022-03-032022-03-031990https://publica.fraunhofer.de/handle/publica/17837810.1016/0749-6036(90)90121-M2-s2.0-0025209626Lead chalcogenide diode lasers were fabricated with PbSe as active layer and different confinement layers consisting of PbS, (PbEu)Se and (PbSr)Se. For PbS confinement layers a red shift in the emission frequency was found, for the other confinement layer types a blue shift was observed. These shifts can be explained by lattice misfit induced strain.enBleichalkogeniddiode laserDiodenlaserGitterfehlanpassunglaser radiationLaserstrahlunglead chalcogenidemisfitstress621540journal article