Oertel, H.K.H.K.OertelChlebek, J.J.ChlebekWeiß, M.M.Weiß2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18341810.1143/JJAP.32.5966Image intensity profile and resist profile calculations using the X-ray modeling and simulation program are presented for storagering X-ray lithography proximity printing. The calculations indicate that there exists a sufficiently wide process window for the replication of 100-nm-wide absorber features, using an optimized set of parameters. The effect of nonvertical absorber sidewalls on the process window is investigated.enphotoresistssynchrotron radiationX-ray lithography621530Process latitude for sub-200 nanometer synchroton orbital radiation X-ray lithographyjournal article