18 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.

Nowotny, U.U.NowotnyBronner, WolfgangWolfgangBronnerHofmann, P.P.HofmannHülsmann, A.A.HülsmannRaynor, B.B.RaynorSchneider, J.J.SchneiderBerroth, M.M.BerrothKöhler, KlausKlausKöhlerWang, Z.-G.Z.-G.Wang2022-03-032022-03-031992https://publica.fraunhofer.de/handle/publica/1809582-s2.0-0026907801A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs quantum well HEMTs of 0 multiplied 3 Mym gate length. The DC and modulation current is 25 and 45 mA, respectively. Open eye diagrams were measured at bit rates up to 18 Gbit/s with pseudorandom data streams.encircuit designHalbleiterlaserdiodeintegrated circuitintegrierte Schaltungoptical communicationoptische KommunikationSchaltungsentwurfsemiconductor laser62166738418 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.18Gbits/s monolithisch-integrierter 2 zu 1 Multiplexer und Lasertreiber mit Quantum-Well Hemt's der 0.3 mym Gatejournal article