Schlipf, SimonSimonSchlipfSander, ChristophChristophSanderClausner, AndréAndréClausnerPaul, JensJensPaulCapecchi, SimoneSimoneCapecchiWambera, LauraLauraWamberaMeier, KarstenKarstenMeierZschech, EhrenfriedEhrenfriedZschech2022-03-142022-03-142021https://publica.fraunhofer.de/handle/publica/41127810.1109/EuroSimE52062.2021.9410858The stress related shifts of transistors are measured by precise stress application with a newly designed in-situ four-point bending (4PB) system. A test board including a flip chip packaged test vehicle is loaded with uniaxial stress. The test vehicle contains dedicated ring oscillator circuits fabricated in the 22 nm FDSOI technology node, used to evaluate the effects of thermo-mechanical stress on the characteristics of CMOS devices. Finite element simulation provides insight into the originated stress values in the board, package, and active devices during mechanical loading. Considering the bending caused stress in the devices and the specific layout of the circuits, the directional frequency shifts of the circuits under stress are derived. These shifts are compared with a previous indentation study, which has been developed to induce very localized loads. The comparison aims for verification of the indentation approach to study directional stress related effects as well as very localized effects in chip stacks.enring oscillatorthermomechanical processsilicon-on-insulatorbendingtransistorsintegrated circuit modelingstress620666conference paper