Wagenaars, E.E.WagenaarsMader, A.A.MaderBergmann, K.K.BergmannJonkers, J.J.JonkersNeff, W.W.Neff2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21632310.1109/TPS.2008.917780An extreme ultraviolet (EUV) plasma source intended for future lithography applications is presented. The plasma source efficiently emits EUV light around 13.5 nm with 2% bandwidth. Debris mitigation and collector systems are successfully implemented to achieve a focused beam of debris-free EUV photons that can be used in EUV lithography.en621530journal article