Denisenko, A.V.A.V.DenisenkoFahrner, W.R.W.R.FahrnerHenschel, HenningHenningHenschelJob, R.R.JobSträhle, U.U.Strähle2022-03-032022-03-031996https://publica.fraunhofer.de/handle/publica/18895710.1109/23.556908Double-junction p-i-p diodes are fabricated on natural and synthetic diamond crystals and polycrystalline CVD diamond films and subjected to gamma, electron and neutron exposure. Parameters of the radiation induced defects (concentration and energy distribution of donor-like traps) are evaluated from the experimental I-V curves using a technique which is based on a model of thermionic injection of holes into the insulating diamond over p-i potential barrier. The evaluated parameters of the traps are used for 2-D numerical simulation of radiation effects on diamond based p-i(SiO2)-p solid state triode.endiamonddiamond diodefast neutronnumerical simulationradiation effect620621journal article