Shani, Y.Y.ShaniRosman, R.R.RosmanNorton, P.P.NortonKatzir, A.A.KatzirPreier, H.M.H.M.PreierTacke, M.M.Tacke2022-03-022022-03-021988https://publica.fraunhofer.de/handle/publica/17451010.1063/1.340341Distributed Bragg reflector Lead-Tin-Selenide/Lead-Europium-Tin-Selenide double heterostructure stripe geometry diode lasers were fabricated using molecular-beam epitaxy. Single-mode cw operation at about 7.8 mym was obtained for heat-sink temperatures in the range 25-75 K. The single-mode continuous tuning range was 10 cm E-1. Tuning the diodes via the injection current, a range of 24 cm E-1 was completely covered with single-mode emission. The reason for this wide tuning range was mode hopping to lower frequencies rather than the usual hopping to higher frequencies. (IPM)enBleichalkogenidInfrarot-DiodenlaserMolekularstrahlepitaxie621530journal article