Schönfelder, A.A.SchönfelderWeisser, S.S.WeisserLarkins, E.C.E.C.LarkinsBenz, W.W.BenzDaleiden, J.J.DaleidenFleissner, J.J.FleissnerMaier, M.M.MaierRalston, J.D.J.D.RalstonCzotscher, K.K.CzotscherRosenzweig, JosefJosefRosenzweig2022-03-092022-03-091995https://publica.fraunhofer.de/handle/publica/324857We demonstrate, for the first time, direct modulation bandwidths exceeding 40 GHz in short-cavity In0.35Ga0.65As/GaAs multiple-quantum-well laser diodes. Low linewidth enhancement factors (a = 1.4) have been extracted, indicating reduced laser chirp under high-speed direct modulation.enchirpInGaAslaser diodeLaserdiodemodulation bandwidthModulationsbandbreitestrained MQWverspannte MQW621667Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodesRekordwerte der Kleinsignalmodulationsbandbreite bis 40 GHz und niedrige Chirp-Faktoren (alpha = 1.4) in Laserdioden mit verspannten In0.35Ga0.65As/GaAs MQW und kurzen Resonatorenconference paper