Maurette-Blasini, CristinaCristinaMaurette-BlasiniSchwantuschke, DirkDirkSchwantuschkeAlbahrani, Sayed AliSayed AliAlbahraniBrückner, PeterPeterBrücknerKuliabin, KonstantinKonstantinKuliabinChartier, SébastienSébastienChartierQuay, RüdigerRüdigerQuay2024-11-262024-11-262024https://publica.fraunhofer.de/handle/publica/47930610.1109/BCICTS59662.2024.10745699This paper reports on the large-signal modeling of AlGaN/GaN high-electron-mobility-transistors. The physicsbased model parameters of the Advanced SPICE Model are used to accurately reproduce the large-signal behavior of different gate length GaN HEMTs even with varying gate-drain and gatesource ledges focusing on passive mixer applications at D-band frequencies (110 - 170 GHz). Dedicated models for 70 nm GaN HEMTs and 100 nm GaN HEMTs with different ledge distances are presented. All models show an excellent agreement with dc and S-parameter measurements of single HEMT devices up to 150 GHz. Furthermore, the 100 nm GaN HEMT model is verified based on an existing resistive D-band mixer MMIC. This shows that the model offers the option to analyze trends in circuit performance (e.g. linearity) when key technology parameters such as the gate length are varied.enD-band resistive mixerhigh-electron-mobility-transistor (HEMT)GaN-HEMTAdvanced SPICE Model for GaN (ASM-GaN)single-ended mixermonolithic microwave integrated circuits (MMICs)conference paper