Uhrmann, T.T.UhrmannDimopoulos, T.T.DimopoulosBrückl, H.H.BrücklLazarov, V.K.V.K.LazarovKohn, A.A.KohnPaschen, U.U.PaschenWeyers, S.S.WeyersBär, L.L.BärRührig, M.M.Rührig2022-03-042022-03-042008https://publica.fraunhofer.de/handle/publica/21554910.1063/1.2891503In this work we present the structural and electrical characterization of sputter-deposited CoFe(B)/MgO/Si metal-insulator-semiconductor tunneling junctions for injection and detection of spin polarized current in silicon. The multilayers have been deposited in 700 nm deep trenches, patterned in thick SiO2 dielectric, on n- and p-doped wafers. The films inside the trenches are continuous with a correlated and low roughness. The MgO barrier grows amorphous without indication of pinholes. The dc and ac transport properties of the junctions were studied as a function of temperature and frequency. A relatively high interface trap density at the MgO/Si-interface is extracted from admittance spectra measurements. Transport is dominated by majority carriers in the case of n- doped and by minority carriers for the p-doped wafers. This leads to distinct rectification characteristics for the two wafer types, which would significantly influence the spin injection efficiency of the tunneling junctions.enferromagnetic memoryspin injection in siliconCMOS621530journal article