Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regime

Schulz, N.N.SchulzRattunde, MarcelMarcelRattundeManz, ChristianChristianManzKöhler, KlausKlausKöhlerWagner, J.J.WagnerHopkins, J.-M.J.-M.HopkinsBurns, D.D.Burns2022-03-102022-03-102007https://publica.fraunhofer.de/handle/publica/35706210.1109/CLEO.2007.4452522We report on the epi-layer design and lasing characteristics of GaSb-based VECSELs emitting at 2.35 mu m optimized for resonant optical in-well pumping around 1.95 mu m. Compared to conventional barrier-pumped devices, the power conversion efficiency is significantly increased.en667Resonant in-well pumping of GaSb-based VECSELs emitting in the 2.X µm wavelength regimeconference paper