Huang, Y.Y.HuangBuettner, J.J.BuettnerLechner, B.B.LechnerWachutka, G.G.Wachutka2022-03-142022-03-142019https://publica.fraunhofer.de/handle/publica/41098210.4028/www.scientific.net/MSF.963.553The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ""realistic"" devices, where we have to cope with serious problems, such as a shifting threshold voltage, reduced forward conductivity, and no noticeable conductivity modulation by minority carrier injection from p+-emitters, in matching measured data with simulation results, as a consequence of the significant impact of non-ideal poor Ohmic contacts. In this work, we used a Schottky contact model together with a barrier tunneling model, instead of common ideal Ohmic contact model, to simulate the non-ideal Ohmic contact on SiC MPS diodes. Based on this approach, the I-V characteristics of real Ohmic contacts can be reproduced in high-fidelity simulations, providing us physical insight of the observed operational behavior.en670620530conference paper