Mori, L.L.MoriHoffmann, D.D.HoffmannBornholdt, C.C.BornholdtMekonnen, G.G.G.G.MekonnenReier, F.F.Reier2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/33419310.1109/ICIPRM.1999.773714We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s.enelectro-optical switcheselectrodeselectroplated coatingsiii-v semiconductorsindium compoundsmach-zehnder interferometerssemiconductor device metallisationtraveling wave electrodeoptoelectronic deviceelectro-optic switchmach-zehnder interferometerloss parameterelectroplated metallizationbandwidth50 GHz100 Gbit/sinp621conference paper