Under CopyrightScharf, PatrickPatrickScharfVelarde Gonzalez, Fabio A.Fabio A.Velarde GonzalezLange, AndréAndréLangeDietrich, M.M.DietrichDudek, V.V.Dudek2022-03-151.12.20212021https://publica.fraunhofer.de/handle/publica/41317610.1109/CAS52836.2021.9604151The demands on modern electronics are constantly increasing. In the field of power electronics, the semiconductor material gallium arsenide (GaAs) is gaining more and more popularity. In this work, a first GaAs PIN Diode for 900 V operation is under investigation. With the help of simulations and measurements, the temperature-dependent reverse breakdown behavior is investigated. An analytical model will be presented, which can reproduce this behavior.enGaAsPiN diodereverse breakdownHV measurementsanalytical model621004conference paper