Romijn, JoostJoostRomijnVollebregt, StenStenVollebregtMay, AlexanderAlexanderMayErlbacher, TobiasTobiasErlbacherZeijl, Henk W. vanHenk W. vanZeijlLeijtens, JohanJohanLeijtensZhang, GuoqiGuoqiZhangSarro, Pasqualina M.Pasqualina M.Sarro2022-09-132022-09-132022https://publica.fraunhofer.de/handle/publica/42536010.1109/MEMS51670.2022.96995332-s2.0-85126397047In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of the photodetectors and CMOS readout circuitry on-chip is vital to compete with the performance of silicon state-of-the-art and for the concept to be adopted by industry, which is where previous implementations of visible blind sun sensors are lacking.en4H-SiCsilicon carbidesun position sensorsUV photodetectorswide bandgap semiconductorsconference paper