Unterborsch, G.G.UnterborschUmbach, A.A.UmbachTrommer, D.D.TrommerMekonnen, G.G.G.G.Mekonnen2022-03-092022-03-091997https://publica.fraunhofer.de/handle/publica/329540A photodetector for an optical TDM network comprising a GaInAs photoabsorbing layer p-i-n photodiode, an optical waveguide and an electrical biasing network is presented. The detector, operating at 1.55 mu m, reveals a responsivity and bandwidth of 0.37 A/W and 70 GHz, respectively.engallium arsenideiii-v semiconductorsindium compoundsinfrared detectorsintegrated opticsintegrated optoelectronicsoptical communication equipmentoptical fibre networksoptical waveguidesp-i-n photodiodesphotodetectorstime division multiplexingGHz long-wavelength photodetectorphotodetectoroptical tdm networkGaInAs photoabsorbing layer p-i-n photodiodeoptical waveguideelectrical biasing networkresponsivity70 GHz1.55 mumGaInAs621conference paper