Under CopyrightBecker, TomTomBeckerMatlok, StefanStefanMatlokHeckel, ThomasThomasHeckelBöttcher, NormanNormanBöttcherLeib, JürgenJürgenLeibErlbacher, TobiasTobiasErlbacher2022-03-1429.4.20212021https://publica.fraunhofer.de/handle/publica/41086710.24406/publica-fhg-410867enSiRC-Snubber Technologytime-dependent dielectric breakdownhigh temperature reverse biasSiRC Structure, Charge Carrier Transport670620530Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitorspresentation