Maier, M.M.MaierPassow, ThorstenThorstenPassowKunzer, MichaelMichaelKunzerPletschen, WilfriedWilfriedPletschenKöhler, KlausKlausKöhlerWagner, J.J.Wagner2022-03-042022-03-042010https://publica.fraunhofer.de/handle/publica/22199110.1002/pssc.200983473A series of 400 nm emitting GaInN/GaN single-well light-emitting diodes, grown on ultra-low dislocation density GaN templates with well widths varying between 3 and 18 nm, were investigated by pulsed and time resolved electroluminescence measurements using small signal modulation technique for the latter. A reduction of the efficiency droop at high current densities with increasing well width was observed. The highest overall external quantum efficiency was obtained for LEDs with 11 nm thick double-heterostructure (or wide well) active region at current densities above 70 A/cm2. Furthermore, carrier lifetime and volume carrier density in the wells were determined. A model based on the interplay between defect assisted recombination, depending on dislocation density, and strongly carrier density dependent loss processes is presented explaining the well-thickness dependence of the efficiency droop.enInGaN/GaNLEDefficiency drooptime resolved electroluminescence667journal article