Mekonnen, G.G.G.G.MekonnenSchlaak, W.W.SchlaakBach, H.-G.H.-G.BachSteingrüber, R.R.SteingrüberSeeger, A.A.SeegerEnger, Th.Th.EngerPassenberg, W.W.PassenbergUmbach, A.A.UmbachSchramm, C.C.SchrammUnterborsch, G.G.UnterborschWaasen, S. vanS. vanWaasen2022-03-032022-03-031999https://publica.fraunhofer.de/handle/publica/19609410.1109/68.7407222-s2.0-0033079948A photoreceiver optoelectronic integrated circuit based on InP with a bandwidth of 37 GHz is presented. The receiver consists of a 50 GHz waveguide-integrated photodiode and a distributed amplifier with a bandwidth of 39.5 GHz, which is composed of four high-electron mobility transistors. A system experiment at 40 Gb/s receiving an return-to-zero coded optical input signal is demonstrated, and a good quality of eye pattern is achieved.enHEMT integrated circuitsiii-v semiconductorsindium compoundsintegrated optoelectronicsoptical receiversphotodiodesGHz bandwidthInP-based photoreceiver oeicdata ratesphotoreceiver optoelectronic integrated circuitinpGHz waveguide-integrated photodiodedistributed amplifierhigh-electron mobility transistorssystem experimentreturn-to-zero coded optical input signalgood qualityeye pattern37 GHz39.5 GHz40 Gbit/s62153537 GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/sjournal article