Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealing

Under CopyrightKocher, MatthiasMatthiasKocherRommel, MathiasMathiasRommelSledziewski, TomaszTomaszSledziewskiHäublein, VolkerVolkerHäubleinBauer, AntonAntonBauer2022-03-1412.10.20182018https://publica.fraunhofer.de/handle/publica/40178010.24406/publica-fhg-401780en670620530Dose dependent profile deviation of implanted aluminum in 4H-SiC during high temperature annealingposter