Szyszka, B.B.Szyszka2022-03-092022-03-092000https://publica.fraunhofer.de/handle/publica/335441This study is on the development of new, economic transparent and conductive oxide layers by reactive sputtering. Aluminium doped zinc oxide films have been prepared by reactive mid-frequency magnetron sputtering at deposition rate of approximately 9 nm/s and substrate temperature of 100°C to 200°C. Process stabilization in the metallic mode has been performed by the control of plasma impedance due to the adjustment of oxygen flow. Metallic Zn:Al targets with aluminium content in the range of 0.9 to 2.9 wt. % have been used. ZnO:Al films prepared by this technique exhibit low resistivity of 300 µ cm at 200°C substrate temperature and 480 µ cm at 100°C substrate temperature (film thickness of 500 nm).entransparent coatingconductive coatingreactive depositionglass substrate667conference paper