A Gate Drive Circuit for GaN GIT Power Semiconductors with a Minimal Number of Components

Sah, BikashBikashSahSprunck, SebastianSebastianSprunckPeinsipp, MoritzMoritzPeinsippJung, MarcoMarcoJung2025-08-122025-08-122025-05-06https://publica.fraunhofer.de/handle/publica/49046110.30420/566541057Gallium Nitride (GaN) devices have emerged as a promising solution to meet the demand for power electronics converters, which are power-dense, low-weight, and cost-effective. This paper presents an innovative gate drive circuit for application in GaN Gate Injection Transistors (GIT). The benefits of the proposed circuit are a low component count, generation of negative gate drive without using a bipolar power supply, ability to adjust the voltage and current transients in the gate drive circuit, and ease of scalability for parallel devices.enPower ElectronicsPower SemiconductorsGallium NitrideGate DriverA Gate Drive Circuit for GaN GIT Power Semiconductors with a Minimal Number of Componentsconference paper