Burns, D.D.BurnsHopkins, J.-M.J.-M.HopkinsKemp, A.J.A.J.KempRösener, B.B.RösenerSchulz, N.N.SchulzManz, ChristianChristianManzKöhler, KlausKlausKöhlerRattunde, MarcelMarcelRattundeWagner, J.J.Wagner2022-03-112022-03-112009https://publica.fraunhofer.de/handle/publica/36220810.1117/12.8119772-s2.0-66749108185Many applications exist for high performance lasers in the short-wave, mid-infrared spectral regime between 1.9 and 2.5µm - from long-range communications systems through to remote atmospheric gas sensing and pollution monitoring. However, a simple, efficient laser source offering the desired performance characteristics and flexibility has not been available. In the last few years considerable progress has been made in the development of optically-pumped (AlGaIn)(AsSb) quantum well semiconductor disk lasers emitting in the 2.Xµm mid-infrared spectral region - continuous-wave and pulsed-pumped output power levels now exceed 6W and 16W respectively. Furthermore, singlefrequency operation with linewidths <4MHz and broad tunability of up to 170nm have also been demonstrated, all at near-diffraction-limited beam quality. Such performance metrics are only possible through the very best materials growth, a sound understanding of the design principles of these highly multi-layered devices and, importantly, the application of effective thermal management.enHalbleiterscheibenlaserVECSELGaSbmittleres Infrarothohe Brillianzsemiconductor disc lasermid infraredhigh brightness667conference paper