Feldmann, FrankFrankFeldmannMüller, RalphRalphMüllerReichel, ChristianChristianReichelHermle, MartinMartinHermle2022-03-042022-03-042014https://publica.fraunhofer.de/handle/publica/23770710.1002/pssr.201409312This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied Voc = 725 mV) and boron-doped passivated contacts (iVoc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts.enSolarzellen - Entwicklung und CharakterisierungSilicium-PhotovoltaikHerstellung und Analyse von hocheffizienten Solarzellen530journal article