Reiner, RichardRichardReinerWaltereit, PatrickPatrickWaltereitBenkhelifa, FouadFouadBenkhelifaMüller, StefanStefanMüllerWespel, M.M.WespelQuay, RüdigerRüdigerQuaySchlechtweg, M.M.SchlechtwegMikulla, MichaelMichaelMikullaAmbacher, OliverOliverAmbacher2022-03-122022-03-122013https://publica.fraunhofer.de/handle/publica/38108910.1109/CSICS.2013.6659219This work reports the development and fabrication of large area AlGaN/GaN-on-Si HFETs for the use in highly-efficient, fast-switching power converters. High performance is demonstrated by full characterization of static- and dynamic-parameters and a direct comparison to two commercial state-of-the-art silicon power devices. Compared to their silicon counterparts the GaN-device achieves by a factor of 3 lower static area specific on-state resistance R(ON)*A, and by a factor of 3 lower static on-state resistance times gate charge product R(ON)*Q. In switching tests the device achieves a low dynamic dispersion and low switching losses. Furthermore in this work a sophisticated measurement setup for characterization of dynamic parameters is developed and demonstrated. Characterization and test conditions are adapted for the use in fast-switching power converter applications.enpower conversionAlGaN/GaN-on-Silow dynamic on-state-resistancelow gate chargelow switching losses667conference paper