Duan, X.M.X.M.DuanDahl, D.D.DahlNdip, I.I.NdipLang, K.D.K.D.LangSchuster, C.C.Schuster2022-03-052022-03-052016https://publica.fraunhofer.de/handle/publica/24319610.1109/TCPMT.2015.2497466This paper presents a novel multipole expansion method for the rigorous analysis of wave propagation along a through-silicon-via (TSV) pair. TSV models are often constructed using equivalent circuits under the assumption that the interfaces between different media are equipotential. In comparison with that, the proposed method is a rigorous full-wave solution of the propagation mode. It takes advantage of cylindrical wave expansion functions and matches the boundary conditions at both the metal-to-insulator and insulator-to-silicon interfaces exactly. The method is validated against a full-wave finite-element method solver, and analysis examples using the method are demonstrated in a frequency range up to 100 GHz.enjournal article