Under CopyrightHauf, MoritzMoritzHaufSchmidt, GerhardGerhardSchmidtNiedernostheide, Franz-JosefFranz-JosefNiedernostheideJohnsson, AnnaAnnaJohnssonPichler, PeterPeterPichler2022-03-146.9.20192018https://publica.fraunhofer.de/handle/publica/40515210.1109/IIT.2018.8807936Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 °C and the dose range from 1E12 to 1E13 cm−2. The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.enplatinum implantationsilicondiffusionprocess simulationdevice simulation670620530Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device SimulationsPlatin in Silicium nach Implantation und Ausheilung: Vom Experiment zur Prozess- und Bauelementesimulationconference paper