Cimalla, VolkerVolkerCimallaLebedev, VadimVadimLebedev2022-03-082022-03-082012https://publica.fraunhofer.de/handle/publica/309933The invention relates to a method for producing a semiconductor structural element, in which a one-dimensional electron gas can be developed, comprising the following steps: providing a substrate having a first surface; separating a masking layer having a first surface and a second surface, wherein the second surface of the masking layer is arranged on the first surface of the substrate; etching at least one trench in the masking layer extending to the first surface of the substrate; inserting a semiconductor material in the at least one trench, which contains a group III nitride, or is made thereof, and removing the first masking layer. The invention further relates to a semiconductor structural element produced according to said method.de667patent102009024311