Lopez-Diaz, D.D.Lopez-DiazKallfass, I.I.KallfassTessmann, AxelAxelTessmannLeuther, ArnulfArnulfLeutherMassler, HermannHermannMasslerSchlechtweg, M.M.SchlechtwegAmbacher, OliverOliverAmbacher2022-03-112022-03-112010https://publica.fraunhofer.de/handle/publica/36735010.1109/CSICS.2010.5619614Two subharmonically pumped 210 GHz I/Q mixer MMICs have been successfully realized in a 100 nm gate length metamorphic high electron mobility transistor (mHEMT) technology. The mixers have been designed using a branchline and a Lange coupler to generate the 90° phase shift between the I and Q ports. A conversion gain of more than -19 dB has been achieved with both mixers. The measured LO to RF isolation of the second harmonic is better than 21 dB.enI/Q mixerMMICmillimeter wavesubharmonic mixerG-Bandfrequency conversion667Subharmonically pumped 210 GHz I/Q mixersconference paper