Thiede, A.A.ThiedeWang, Z.-G.Z.-G.WangSchlechtweg, M.M.SchlechtwegLang, M.M.LangLeber, P.P.LeberLao, Z.Z.LaoNowotny, U.U.NowotnyHurm, V.V.HurmRieger-Motzer, M.M.Rieger-MotzerLudwig, M.M.LudwigSedler, M.M.SedlerKöhler, KlausKlausKöhlerBronner, WolfgangWolfgangBronnerHornung, J.J.HornungHülsmann, A.A.HülsmannKaufel, G.G.KaufelRaynor, B.B.RaynorSchneider, J.J.SchneiderJakobus, T.T.JakobusSchroth, J.J.SchrothBerroth, M.M.Berroth2022-03-032022-03-031998https://publica.fraunhofer.de/handle/publica/19295910.1109/92.6612402-s2.0-0032025750During the past five years numerous mixed signal integrated circuits (IC's) have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLL's, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.enAnalog- und Digitalschaltkreisanalog and digital ICGaAs circuitGaAs-Schaltkriesmicrowave circuitMikrowellenschaltkreisphase-locked loopPhasenregelkreis621667300journal article