Liu, J.J.LiuXu, Z.Z.XuSong, Y.Y.SongWang, H.H.WangDong, B.B.DongLi, S.S.LiRen, J.J.RenLi, Q.Q.LiRommel, M.M.RommelGu, X.X.GuLiu, B.B.LiuHu, M.M.HuFang, F.F.Fang2022-03-062022-03-062020https://publica.fraunhofer.de/handle/publica/26941910.1016/j.npe.2020.11.003Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new controllable color center fabrication method, femtosecond (fs) laser writing has been gradually applied in the preparation of VSi in SiC. In this study, 4H-SiC was directly written by an fs laser and characterized at 293 K by atomic force microscopy, confocal photoluminescence (PL), and Raman spectroscopy. PL signals of VSi were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional mapping. The influence of machining parameters on the VSi formation was analyzed, and the three-dimensional distribution of VSi defects in the fs laser writing of 4H-SiC was established.en670620530journal article