Kalkowski, GerhardGerhardKalkowskiRisse, S.S.RissePeschel, ThomasThomasPeschel2022-03-082022-03-082012https://publica.fraunhofer.de/handle/publica/309842The holding element has electrodes (4,4') which are formed on the surface of a base portion (1) and are covered by the dielectric layer. The dielectric layer is used as a support for the to-be-processed items. The base portion is formed of carbon fiber reinforced silicon carbide (SiC). The carbon fibers embedded in the SiC are arranged and/or oriented in one plane which is aligned parallel to the support plane for the to-be-processed items. The base portion comprises approximately isotropic thermal expansion characteristics, at room temperature.de620patent102012002646