Under CopyrightMortet, V.V.MortetBedel-Pereira, E.E.Bedel-PereiraBobo, J.J.BoboStrenger, C.C.StrengerUhnevionak, V.V.UhnevionakBurenkov, A.A.BurenkovCristiano, F.F.CristianoBauer, A.A.Bauer2022-03-1212.12.20122012https://publica.fraunhofer.de/handle/publica/37721910.24406/publica-fhg-377219en4H-SiCMOSFEThall effecthall mobilitycharge carrier densityCoulomb scatteringnitrogen implantation670620530Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantationposter