Aslam, A.A.AslamBrockherde, W.W.BrockherdeHosticka, B.J.B.J.HostickaVogt, H.H.VogtZimmer, G.G.Zimmer2022-03-092022-03-091996https://publica.fraunhofer.de/handle/publica/32603010.1109/IEDM.1996.554130A light-sensitive pmos-transistor in a floating n-well and combined with an analoge EEPROM has been fabricated as a single element in a standard 1.5 mu m single-poly CMOS/EEPROM technology. It provides nonvolatile weighted analog image storage and can be programmed in parallel, if implemented as an array. As an example, an image sensor with a nonvolatile analog programmable offset and sensitive adjustment has been realised.enanalogue storageEEPROMphotoelement621conference paper