Strauss, U.U.StraussRühle, W.W.W.W.RühleKöhler, KlausKlausKöhler2022-03-032022-03-031993https://publica.fraunhofer.de/handle/publica/18240710.1063/1.108817The recombination kinetics of the electron-hole plasma in strongly excited, intrinsic GaAs is investigated at room temperature by time-resolved photoluminescence using a line-shape analysis of transient spectra. Special structuring of the samples prevents stimulated emission and diffusion. Population of higher energetic subsidiary conduction-band valleys must be taken into account for densities bigger than 1.5 x 10high19 cmhighminus3. A significant influence of Auger recombination is detected for densities bigger than 2.5 x 10high19 cmhighminus3. The bimolecular recombination coefficient and an effective Auger coefficient are found to be B is equal to (1.7 plusminus 0.2) x 10highminus10 cmhigh3 shighminus1 and Csubeff is equal to (7 plusminus 4) x 10highminus30 cmhigh6 shighminus1, respectively.enAuger recombinationAuger-recombinationIII-V HalbleiterIII-V semiconductorstimeresolved photoluminescencezeitaufgelöste Photolumineszenz621667journal article