Using SiC MOSFET's full potential - Swichting faster than 200 kV/µs

Kreutzer, O.O.KreutzerHeckel, T.T.HeckelMärz, M.M.März2022-03-132022-03-132016https://publica.fraunhofer.de/handle/publica/39201710.4028/www.scientific.net/MSF.858.8802-s2.0-84971530388enUsing SiC MOSFET's full potential - Swichting faster than 200 kV/µsconference paper