Kordas, N.N.KordasDerksen, S.S.DerksenFiedler, H.-L.H.-L.FiedlerSchmidt, M.M.SchmidtYasujima, A.A.YasujimaMatsui, M.M.MatsuiNagano, S.S.NaganoIshibashi, K.K.Ishibashi2022-03-092022-03-091999https://publica.fraunhofer.de/handle/publica/33306610.1109/ISSCC.1999.759162A high-temperature SIMOX technology using tungsten metallization has been employed for fabrication of a 1.7 mm2 low-offset temperature compensated Hall-readout IC. The chip is suitable for automotive applications up to 200 deg C. The automatic offset cancellation scheme allows for time continuous operation with 0.6mV offset.enHall-SensorHochtemperaturSIMOX-Technologie621conference paper